PART |
Description |
Maker |
BG5120K |
Dual N-Channel MOSFET Tetrode
|
Infineon Technologies AG
|
BF995B BF995A BF995 |
ECONOLINE: RKZ - Safety standards and approvals: EN 60950 certified, rated for 250VAC (LVD test report)- Custom Solutions Available- 3kVDC & 4kVDC Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode From old datasheet system N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
|
Vishay Intertechnology,Inc. VISAY[Vishay Siliconix]
|
BF966S |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode From old datasheet system N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
|
Vishay Siliconix Vishay Telefunken
|
BF1009 |
Silicon N-Channel MOSFET Tetrode for ...
|
Infineon
|
BF100507 |
Silicon N-Channel MOSFET Tetrode
|
Infineon Technologies AG
|
BF1009SR BF1009S |
RF-MOSFET - integrated full biasing network, VDS=9V, gfs=30mS, Gps=22dB, F=1.4dB; Datasheet on demand Silicon N-Channel MOSFET Tetrode
|
INFINEON[Infineon Technologies AG]
|
Q62702-F936 BF995 |
Silicon N Channel MOSFET Tetrode (For input and mixer stages in FM and VHF TV tuners)
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
S888T |
N?Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode From old datasheet system
|
Vishay
|
BF988 |
From old datasheet system N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
|
Vishay Intertechnology,Inc. Vishay Siliconix
|
Q62702-F1587 BF1012W |
From old datasheet system SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz)
|
SIEMENS[Siemens Semiconductor Group]
|
Q62702-F1776 BF2040W |
Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V) Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)
|
Infineon SIEMENS[Siemens Semiconductor Group]
|